NDLI: A Process Control Test for Lateral Charge Spreading Susceptibility

Content Provider	IEEE Xplore Digital Library
Author	Brown, George A. Lovelace, Keith Hutchins, Charles
Copyright Year	1973
Description	Author affiliation: MOS Product Engineering, Texas Instruments, Inc., P.O. Box 5012, Dallas, Texas 75222 (Hutchins, Charles) \|\| Semiconductor Research and Development Laboratory, Texas Instruments, Inc., P.O. Box 5012, Dallas, Texas 75222 (Brown, George A.) \|\| Quality and Reliability Assurance, Texas Instruments, Inc., P.O. Box 5012, Dallas, Texas 75222 (Lovelace, Keith)
Abstract	A rapid process control stress test is described, for use in evaluating the susceptibility of MOS circuits-to lateral charge spreading and subsequent channel formation. Measurements of the temperature, time, and stress voltage dependence of the induced channel conductance are described, and these lead to the specification of the standardized stress conditions for the test procedure. The observed temperature dependence is consistent with an activation energy of 1 eV for the charge spreading mechanism. Choice of an appropriate stress voltage is dependent upon field oxide, substrate, and protective overcoat material parameters, in relation to the physical site of the charge spreading. Measurements to separate charge spreading at the overcoat-field oxide interface or in the film bulk are described. The standardized test procedure has been validated for use as a process control by correlating its results with the life test behavior of MOS integrated circuits having various types of overcoat materials. Inversion failure rates of these circuits subjected to conventional life test procedures are found to be proportional to the induced channel conductances observed in the accelerated process control test.
Starting Page	203
Ending Page	207
File Size	5754136
Page Count	5
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1973.362597
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-04-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Process control Circuit testing Life testing Temperature measurement Temperature dependence Voltage Materials testing Integrated circuit testing Stress measurement Time measurement
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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