NDLI: Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Duan, F.L. Ioannou, D.E. Jenkins, W.C. Hughes, H.L. Liu, M.S.T.
Copyright Year	1998
Description	Author affiliation: Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA (Duan, F.L.)
Abstract	Carrier generation by impact ionization in SOI MOSFETs as a function of the strength of channel coupling, adjusted by varying the back gate bias or the silicon film thickness, was extensively studied by extensive PISCES numerical simulations. The results show that stronger front/back channel coupling results in lower carrier generation, and consequently, lower hot carrier degradation. Experimental measurements of the substrate current and hot carrier device degradation verified these results. At the same time, however, the stronger channel coupling results in a lower value for the single-transistor latch-up voltage V/sub DLU/. The above observations mean that there is a trade-off between hot carrier degradation and single transistor latch-up voltage in SOI MOSFETs.
Starting Page	194
Ending Page	202
File Size	697075
Page Count	9
File Format	PDF
ISBN	0780344006
DOI	10.1109/RELPHY.1998.670542
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-03-31
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Degradation MOSFETs Voltage Impact ionization Silicon Semiconductor films Numerical simulation Current measurement Substrates
Content Type	Text
Resource Type	Article

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