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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Geller, B. Hanson, A. Chaudhari, A. Edwards, A. Kizilyalli, I.C. |
| Copyright Year | 2008 |
| Description | Author affiliation: Nitronex Corp., Durham, NC (Geller, B.; Hanson, A.; Chaudhari, A.; Edwards, A.; Kizilyalli, I.C.) |
| Abstract | The design and performance of a 0.1 to 5 GHz medium power distributed amplifier is described. The circuit is realized using a low-cost GaN-on-silicon MMIC process featuring 0.5 mum gate length GaN HFETs on a 150 mum thick high resistivity silicon substrate. The circuit was designed using a non-linear FET model and standard passive component models. The first pass circuit demonstrates a saturated output power of 2 W and a maximum efficiency of greater than 30% at 1 GHz at a drain bias of 15 V, and a saturated output power of 3 W and maximum efficiency of 23% at 2.5 GHz with a drain bias of 28 V. |
| Starting Page | 527 |
| Ending Page | 530 |
| File Size | 2913304 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424418084 |
| ISSN | 15292517 |
| DOI | 10.1109/RFIC.2008.4561492 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-06-17 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Costs MMICs Broadband amplifiers Circuits Power generation Distributed amplifiers Gallium nitride HEMTs MODFETs Conductivity power amplifiers distributed amplifiers gallium nitride MMIC amplifiers |
| Content Type | Text |
| Resource Type | Article |
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