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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Day-Uei Li Li-Ren Huang Chia-Ming Tsai |
| Copyright Year | 2005 |
| Description | Author affiliation: SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan (Day-Uei Li; Li-Ren Huang; Chia-Ming Tsai) |
| Abstract | A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35 /spl mu/m SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9 V/sub PP/ differential or 4.5 V/sub PP/ single-ended (S.E.) output swing with rise/fall time less than 29 ps while it consumes power as low as 0.8 W. The performance and simulation results compared with preceding works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the commonly-reported silicon-based modulator drivers. |
| Sponsorship | IEEE Microwave Theory and Techniques Soc. IEEE Electron Devices Soc. IEEE Solid State Circuits Soc |
| Starting Page | 317 |
| Ending Page | 320 |
| File Size | 727722 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780389832 |
| ISSN | 15292517 |
| DOI | 10.1109/RFIC.2005.1489796 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-06-12 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Energy consumption Silicon germanium Germanium silicon alloys Capacitance Output feedback Driver circuits Heterojunction bipolar transistors Integrated circuit technology BiCMOS integrated circuits Intensity modulation |
| Content Type | Text |
| Resource Type | Article |
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