NDLI: Characterization and modeling of small-signal substrate resistance effect in RF CMOS

Content Provider	IEEE Xplore Digital Library
Author	Yo-Sheng Lin Shey-Shi Lu Tai-Hsing Lee Hsiao-Bin Liang
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli, Taiwan (Yo-Sheng Lin)
Abstract	A novel theory based on dual-feedback circuit methodology is proposed to explain the kink phenomenon of scattering parameter S/sub 22/ in deep submicrometer MOSFETs. Our results show that the output impedance of MOSFETs intrinsically shows a series RC circuit (for low substrate resistance) or a "shifted" series RC circuit (for very high substrate resistance) at low frequencies, and a parallel RC circuit at high frequencies. It is this inherent triple characteristic of the output impedance that causes the appearance of double kinks phenomenon of S/sub 22/ in a Smith chart. Our model can not only predict the behavior of S/sub 22/, but also calculate all S-parameters accurately. Experimental data of 0.25-/spl mu/m-gate MOSFETs are used to verify our theory. Excellent agreement between theoretical values and experimental data was found.
Sponsorship	IEEE Microwave Theory and Techniques Soc. IEEE Electron Devices Soc. IEEE Solid States Circuits Soc
Starting Page	315
Ending Page	318
File Size	303306
Page Count	4
File Format	PDF
ISBN	0780372468
ISSN	15292517
DOI	10.1109/RFIC.2002.1012057
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device modeling Radio frequency Scattering parameters MOSFETs Impedance Computational Intelligence Society Feedback circuits Electric resistance VHF circuits Microwave transistors
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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