NDLI: A 2.6 V GSM/PCN dual band variable gain low noise RF down conversion mixer

Content Provider	IEEE Xplore Digital Library
Author	Bonkee Kim Kyung-Suc Nah Tae-Won Ahn Han-Il Lee Je-Kwang Cho Byeong-Ha Park
Copyright Year	2002
Description	Author affiliation: RF projects, Samsung Electron. Co. Ltd., Kyunggi, South Korea (Bonkee Kim; Kyung-Suc Nah; Tae-Won Ahn; Han-Il Lee; Je-Kwang Cho; Byeong-Ha Park)
Abstract	As a building block for a GSM/PCN dual band RF transceiver IC, a low noise variable gain RF down conversion mixer is designed and fabricated using a 15 GHz-f/sub T/, 0.5 /spl mu/m 3-metal 2-poly BiCMOS process. Careful consideration is paid to the low noise performance of the mixer. Moreover, using constant-impedance input/output stages, RF input and IF output return losses are maintained under -16 dB for both high and low gain modes. Measured gain and DSB noise figure of the mixer are 10.9 dB and 9.1 dB, respectively, for GSM band, and 9.6 dB and 8.1 dB, respectively, for PCN band. Gain difference between high and low gain modes is 11 dB and 11.8 dB for GSM and PCN, respectively. Total DC currents are 13 mA for GSM and 11.5 mA for PCN from a 3 V supply voltage. Mixer performance is maintained with supply voltage down to 2.6 V.
Sponsorship	IEEE Microwave Theory and Techniques Soc. IEEE Electron Devices Soc. IEEE Solid States Circuits Soc
Starting Page	137
Ending Page	140
File Size	303038
Page Count	4
File Format	PDF
ISBN	0780372468
ISSN	15292517
DOI	10.1109/RFIC.2002.1011941
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	GSM Personal communication networks Dual band Gain Radio frequency Integrated circuit noise BiCMOS integrated circuits Voltage Transceivers Radiofrequency integrated circuits
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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