NDLI: Application of a new MOS-transistor model to total dose radiation effects in CMOS-devices

Content Provider	IEEE Xplore Digital Library
Author	Sigfridsson, B.
Copyright Year	1991
Description	Author affiliation: Nat. Defence Res. Estab., Linkoping, Sweden (Sigfridsson, B.)
Abstract	Electrical properties of irradiated MOS-devices are investigated experimentally and analysed by the use of a new model for the IV-characteristics of a MOS-transistor. In addition to the established effects, hole trapping and formation of interface states, it was observed, by measuring electrical properties of the bipolar configurations included in the MOS-structures, that minority carrier traps are created in the bulk or transition regions. According to the new model, the radiation induced decrease of the subthreshold slope is mainly caused by the latter effect while the interface states causes a bend or a knee on the subthreshold slope. The latter property was predominant in a second MOS-technology investigated. The new model also predicts the radiation induced decrease of the transistor constant as well as the substrate bias properties. The minority carrier traps may occur in n-channel as well as p-channel devices and influences the subthreshold slopes and transistor constants in the same way in both kind of devices.
Starting Page	538
Ending Page	543
File Size	579825
Page Count	6
File Format	PDF
ISBN	0780302087
DOI	10.1109/RADECS.1991.213542
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-09
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Electron traps Interface states Charge carrier processes Threshold voltage Current measurement Charge measurement Voltage measurement Knee Predictive models
Content Type	Text
Resource Type	Article

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