NDLI: /sup 4/He, /sup 12/C and /sup 63/Cu ions effect simulation on silicon diode

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/sup 4/He, /sup 12/C and /sup 63/Cu ions effect simulation on silicon diode

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/sup 4/He, /sup 12/C and /sup 63/Cu ions effect simulation on silicon diode

Content Provider	IEEE Xplore Digital Library
Author	Michez, A. Bordure, G. Patin, Y. Gosselin, G.
Copyright Year	1991
Description	Author affiliation: Univ. des Sci. et Tech. du Languedoc, Montpellier, France (Michez, A.; Bordure, G.)
Abstract	The effect of 5 MeV alpha particles, 30 MeV /sup 12/C ions and 70 MeV /sup 63/Cu ions on a large area silicon P/sup +/N diode is simulated. Computer simulation is performed in 3D axisymmetric geometry with the device simulator ACCES. The effect of high LET particles with short track is compared to the effect of low LET particles with long track. The diffusion component of the collected charge is shown to be important for the three particles in this large area 10 V reverse-biased diode.
Starting Page	419
Ending Page	423
File Size	314411
Page Count	5
File Format	PDF
ISBN	0780302087
DOI	10.1109/RADECS.1991.213562
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-09
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Helium Silicon Semiconductor diodes Doping Poisson equations Computational modeling Computer simulation Semiconductor process modeling Charge carrier processes Computational geometry
Content Type	Text
Resource Type	Article

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