NDLI: Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments

Content Provider	IEEE Xplore Digital Library
Author	Knoll, M. Braunig, D. Fahrner, W. R.
Copyright Year	1963
Abstract	Results of irradiation and high field tunnel injection experiments on MOS capacitors are discussed. The midgap voltage shift as a function of dose is caused by hole trapping only. In the case of tunnel injection, the generation of electron-hole pairs by impact ionization requires a much larger electron density and high fields. Thus a model of charge build-up is established which takes into account the hole trapping in neutral oxide states, the subsequent electron trapping in now positively charged states and detrapping of captured electrons. By means of this model, the prediction of the radiation hardness of MOS devices is feasible, provided that the impact ionization coefficient a is known accurately. If this is not the case, the combined techniques of ionizing irradiation and tunnel injection can be utilized to determine ¿ = ¿o exp(-H¿/F) as a function of the electrical field F. Electron capture and detrapping crosssections ¿n and ßn, resp., can be deduced by fitting the model to the experimental results. An F-3 dependency for ¿n and an exp(-Hß/F) dependency for ßn are found. Only a weak dependence on different processing parameters is observed. The proposed model is verified by a sequence of irradiation and injection steps. The generation of oxide charge is accompanied by an increase in interface state density Dit with a distribution, which peaks at about 0.15 eV above midgap, in both experiments. The results indicate that the generation of interface states is proportional to the amount of trapped holes.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1471
Ending Page	1478
Page Count	8
File Size	1460506
File Format	PDF
ISSN	00189499
Volume Number	29
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Interface states Ionizing radiation Electron traps Impact ionization Charge carrier processes MOS capacitors Voltage Predictive models MOS devices Radioactive decay
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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