NDLI: Analysis of ionizing radiation induced damage in charge coupled devices

Content Provider	IEEE Xplore Digital Library
Author	Roy, F. Vandekerckhove, M. Thenoz, Y. Commere, B. Baratier, L.
Copyright Year	1991
Description	Author affiliation: Thomson Composants Militaires et Spatiaux, Saint-Egreve, France (Roy, F.; Vandekerckhove, M.; Thenoz, Y.; Commere, B.)
Abstract	Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird's beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird's beak.
Starting Page	333
Ending Page	337
File Size	362695
Page Count	5
File Format	PDF
ISBN	0780302087
DOI	10.1109/RADECS.1991.213580
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-09
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionizing radiation Charge coupled devices Degradation Circuits Performance analysis Charge-coupled image sensors Testing Performance evaluation Insulation Interface states
Content Type	Text
Resource Type	Article

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