NDLI: Optimization of importance sampling Monte Carlo using consecutive mean-shift method and its application to SRAM dynamic stability analysis

Content Provider	IEEE Xplore Digital Library
Author	Kida, T. Tsukamoto, Y. Kihara, Y.
Copyright Year	2012
Description	Author affiliation: Electronics Corporation, 5-20-1, Josuihon-cho, Kodaira, Tokyo, Japan (Kida, T.; Tsukamoto, Y.; Kihara, Y.)
Abstract	With the scaling of MOSFET dimensions and the lowering of supply voltage, more precise estimation of minimum operating voltage (V) of SRAM at 6-sigma level is needed. In this paper, we propose a method based on the importance sampling (IS) Monte Carlo simulation to elaborately predict V for future technology node below 22 nm generation. By executing Monte Carlo (MC) simulation with consecutive mean-shift method we propose, it is shown that the most probable failure point (MPFP) is effectively and steadily derived within 0.01σ accuracy without depending on the way of random number generation. The proposed method is applied to static and dynamic behaviors of SRAM. Through the comparison with the results obtained by conventional IS method, we clarify that the method proposed is more suitable for future SRAM characterization.
Starting Page	572
Ending Page	579
File Size	953290
Page Count	8
File Format	PDF
ISBN	9781467310345
ISSN	19483287
e-ISBN	9781467310369
DOI	10.1109/ISQED.2012.6187551
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Monte Carlo methods Accuracy Stability analysis Transistors Analytical models Mathematical model most probable failure point SRAM Monte Carlo importance sampling static noise margin dynamic stability
Content Type	Text
Resource Type	Article

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