NDLI: Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation

Content Provider	IEEE Xplore Digital Library
Author	Yang, S.-C. Suzukil, T. Jiang, W. Yatsui, K.
Copyright Year	2001
Description	Author affiliation: Nagaoka Univ. of Technol., Niigata, Japan (Yang, S.-C.)
Abstract	Summary form only given, as follows. Polycrystalline silicon (poly-Si) thin films are widely used in various electronic devices, such as a semiconductor in thin film transistors (TFTs), solar cells, peripheral circuits of liquid-crystal displays, and electrodes in Si integrated circuits because of its considerably higher carrier mobility compared to that of hydrogenated amorphous silicon thin films. Plasma-enhanced chemical vapor deposition (PECVD) is one of methods to deposit poly-Si films. However, the PECVD has disadvantages because the substrate should be annealed to high temperature (typically, 400 /spl sim/ 1,000 /spl deg/C). The purpose of this study is to prepare poly-Si thin films without heating the substrate by intense, pulsed, ion-beam evaporation (IBE). Using IBE technique, we have succeeded in the preparation of polycrystalline silicon thin films on the substrate of silicon or quartz. High crystallinity has been achieved without annealing. Since the life time of the ablation plasma obtained by the pulsed ion beam with 50 ns pulse width is on the order of 20 /spl mu/s, the instantaneous deposition rate will be /spl sim/1 cm/s. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma, while the grain size of the film has been found to be smaller. We will report the characteristics of poly-Si films using X-ray diffraction, Raman spectra, X-ray photoelectron spectroscopy and scanning electron microscope measurements.
Sponsorship	Plasma Sci. & Applications Committee
File Size	72951
File Format	PDF
ISBN	0780371410
DOI	10.1109/PPPS.2001.961390
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Semiconductor thin films Thin film transistors Thin film circuits Substrates Thin film devices Plasma temperature Annealing Identity-based encryption Crystallization
Content Type	Text
Resource Type	Article

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