NDLI: Edge terminations for SiC high voltage Schottky rectifiers

Content Provider	IEEE Xplore Digital Library
Author	Bhatnagar, M. Nakanishi, H. Bothra, S. McLarty, P.K. Baliga, B.J.
Copyright Year	1993
Description	Author affiliation: Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA (Bhatnagar, M.; Nakanishi, H.; Bothra, S.; McLarty, P.K.; Baliga, B.J.)
Abstract	A study of floating metal field rings (FMRs) and resistive Schottky barrier field plate (RESP) edge terminations for high-voltage silicon carbide (SiC) Schottky barrier diodes (SBD) is reported. For a drift region doping of 2*10/sup 16/ cm/sup -3/, numerical simulations indicated a breakdown voltage for an unterminated diode of about 225 V as compared to approximately=1125 V for a parallel plane structure. For the FMR termination, simulations indicate a breakdown voltage of approximately=600 V for a three-ring termination with a ring spacing of 0.8 mu m. Experimentally determined breakdown voltages of SiC SBDs fabricated using FMR termination were >400 V as compared to approximately=220 V for unterminated diodes. For the RESP termination, an analytical model was developed to study the effect of various design parameters, such as RESP length and sheet-resistance, on the breakdown voltage. This model was used to optimize various design parameters for SBDs fabricated using RESP termination.
Starting Page	89
Ending Page	94
File Size	588251
Page Count	6
File Format	PDF
ISBN	0780313135
ISSN	10636854
DOI	10.1109/ISPSD.1993.297115
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-05-18
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Voltage Rectifiers Magnetic resonance Schottky diodes Schottky barriers Doping Numerical simulation Analytical models Design optimization
Content Type	Text
Resource Type	Article

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