NDLI: Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs

Content Provider	IEEE Xplore Digital Library
Author	Trajkovic, T. Udrea, F. Lee, C. Udugampola, N. Pafhirana, V. Mihaila, A. Amaratunga, G.A.J.
Copyright Year	2008
Description	Author affiliation: Cambridge Semicond. Ltd. - CamSemi, Cambridge (Trajkovic, T.; Udrea, F.; Lee, C.; Udugampola, N.; Pafhirana, V.; Mihaila, A.; Amaratunga, G.A.J.)
Abstract	A step change in performance and reliability of thick SOI membrane devices compared to earlier generation of devices on ultra-thin SOI membranes is reported in here. The membrane concept first reported offered a landmark improvement in the trade-off between switching losses and breakdown capability (in excess of 700V) but its current capability was limited by the thickness of the silicon membrane (around 30 $A/cm^{2}$ for LIGBTs on 0.25 mum silicon membranes, achieving a loss related power density approaching 100 $W/cm^{2}$ ). This paper reports on membrane power devices with current densities which approach the best of those offered by vertical devices (current density greater than 100 A/cm with power density of 180 $W/cm^{2}$ ), without sacrificing switching speed $(t_{off}$ < 60 ns for 1.5 mum membranes). HTRB results showing 1000 h+ operation at 125degC at 80% of the rated voltage are also presented. Finally, it is shown that both the static and dynamic high temperature operation of thick membrane LIGBTs is superior to that of state-of-the-art integrated LDMOSFETs.
Starting Page	327
Ending Page	330
File Size	260952
Page Count	4
File Format	PDF
ISBN	9781424415328
DOI	10.1109/ISPSD.2008.4538965
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Biomembranes Voltage Power integrated circuits Silicon on insulator technology Current density Semiconductor device reliability Power generation Electric breakdown Plasma temperature Isolation technology
Content Type	Text
Resource Type	Article

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