NDLI: 4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose

Content Provider	IEEE Xplore Digital Library
Author	Noborio, M. Suda, J. Kimoto, T.
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. Sci., Kyoto Univ., Kyoto (Noborio, M.; Suda, J.; Kimoto, T.)
Abstract	For further improvement of lateral power devices, 4H-SiC double RESURF MOSFETs with high RESURF doses have been fabricated and characterized. The drift resistance was decreased and the breakdown voltage was increased with increasing RESURF doses, although oxide brekaodown occurs when the RESURF doses are too high. The increase in drift resistance at elevated temperature was smaller for double RESURF MOSFETs than single RESURF MOSFETs, due to the higher doping concentration in the RESURF region. The fabricated 4H- SiC (0001) double RESURF MOSFETs exhibited a breakdown voltage $(V_{B})$ of 1430 V and an on-resistance $(R_{ON})$ of 57 $mOmegacm^{2},$ and the MOSFETs on 4H-SiC (0001 macr) face demonstrated a higher breakdown voltage of 1550 V and a lower on-resistance of 54 2 2 / $mOmegacm^{2}$ . The figure-of-merit $(V_{B}$ $/R_{ON})$ of the fabricated device on Si face and C face is 36 MW/cm2 and 44 $MW/cm^{2},$ respectively, which is the highest value among any lateral MOSFETs ever reported.
Starting Page	263
Ending Page	266
File Size	207781
Page Count	4
File Format	PDF
ISBN	9781424415328
DOI	10.1109/ISPSD.2008.4538949
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Silicon carbide Power engineering and energy Power integrated circuits Fabrication Power semiconductor devices Photonic integrated circuits Temperature Doping FETs
Content Type	Text
Resource Type	Article

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