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Content Provider | IEEE Xplore Digital Library |
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Author | Takaya, H. Miyagi, K. Hamada, K. |
Copyright Year | 2007 |
Description | Author affiliation: Toyota Motor Corp., Aichi (Takaya, H.; Miyagi, K.; Hamada, K.) |
Abstract | A MOSFET structure called a FITMOS (floating island and thick bottom oxide trench gate MOSFET) has been successfully developed that exhibits record-low loss in the 60 V breakdown voltage (BVdss) range. The device has a body diode with superior reverse recovery characteristics and exhibits an extremely small value for RonQgd. The distinctive features of this device are the use of floating P islands formed by self-alignment and trench gates with a thick oxide layer at the bottom. The following improvements achieved progress in the characteristic of FITMOS. At the time of AC operation, the charges in the floating P islands which are a feature of the floating type device become greater, increasing the on-resistance (Ron) due to the JFET effect. This issue was solved by forming passive hole gates in the end walls of the trenches. The Ron under AC operation is equivalent to the Ron under DC operation. The trade-off of BVdss and Ron has been improved by making the form of the floating island into an elliptical form. A BVdss of 83 V and specific on-resistance (RonA) of 36 $mOmegamm^{2}$ were obtained. |
Starting Page | 197 |
Ending Page | 200 |
File Size | 1490070 |
Page Count | 4 |
File Format | |
ISBN | 1424410959 |
DOI | 10.1109/ISPSD.2007.4294966 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2007-05-27 |
Publisher Place | South Korea |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | MOSFET circuits Power MOSFET Semiconductor diodes Power semiconductor devices AC motors Immune system Impurities Capacitance Power electronics Automobiles |
Content Type | Text |
Resource Type | Article |
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