NDLI: 1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints

Content Provider	IEEE Xplore Digital Library
Author	Schlapbach, U. Rahimo, M. von Arx, C. Mukhitdinov, A. Linder, S.
Copyright Year	2007
Description	Author affiliation: ABB Switzerland Ltd, Lenzburg (Schlapbach, U.; Rahimo, M.; von Arx, C.; Mukhitdinov, A.; Linder, S.)
Abstract	The targeted 175degC junction temperature limit for the next generation of 1200 V IGBT requires safe and reliable operation of the devices at a temperature of 200degC. Due to the exponential scaling of several IGBT parameters, such high temperatures will subject the IGBT to new levels of stress, guiding chip designers and application people onto completely new grounds whose firmness is largely unknown. In this paper, we take some first steps by investigating the operation of 1200 V IGBTs at temperatures up to 200degC, looking at their characteristics, trying to understand potentials and possible threats, and drawing initial conclusions how such devices must be dimensioned in order to operate safely.
Starting Page	9
Ending Page	12
File Size	440113
Page Count	4
File Format	PDF
ISBN	1424410959
DOI	10.1109/ISPSD.2007.4294919
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Temperature distribution Cooling Stability criteria Performance loss Voltage Leakage current Power semiconductor devices Semiconductor device reliability Stress
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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