NDLI: Design concept of n-buffer layer (n-Bottom Assist Layer) for 600V-class Semi-Super Junction MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Ono, S. Saito, W. Takashita, M. Kurushima, S. Tokano, K. Yamaguchi, M.
Copyright Year	2007
Description	Author affiliation: Toshiba Corp., Kawasaki (Ono, S.; Saito, W.; Takashita, M.; Kurushima, S.; Tokano, K.; Yamaguchi, M.)
Abstract	We report the experimental results detailed about the n-buffer layer (n-BAL: n-bottom assist layer) of 600 V-class semi-SJ MOSFET, and discuss about the design optimization by comparing the trade-off characteristics between the specific on-resistance $(R_{on}A)$ and the breakdown voltage $(V_{B}),$ the avalanche capability and the body diode characteristic for the first time. As design parameters, the thickness ratio $T_{BAL}-ratio$ and the doping concentration $N_{BAL}$ were varied in this work. As a result, the VB=750 V, the $R_{on}A=24.6$ $mOmegacm^{2},$ the maximum avalanche current density $J_{AP}=292$ $A/cm^{2}$ $(I_{AP}=7.6A,$ $E_{AS}=1.25$ $J/cm^{2}),$ and softness factor=0.277 were obtained with the structure of $T_{BAL}-ratio=27%$ and $N_{BAL}=1.0x10^{15}cm^{-3}.$ The demonstration results showed that NPT (non punch through)-type design (with high $T_{BAL}-ratio$ and high $N_{BAL})$ realized the larger avalanche capability and the softer reverse recovery characteristic compared with PT (punch through)-type design.
Starting Page	25
Ending Page	28
File Size	3291025
Page Count	4
File Format	PDF
ISBN	1424410959
DOI	10.1109/ISPSD.2007.4294923
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Doping Power MOSFET Voltage Power semiconductor devices Facsimile Design optimization Semiconductor diodes Current density Power supplies
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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