NDLI: Single-walled carbon nanotube-based field-effect transistors (non-reviewed)

Content Provider	IEEE Xplore Digital Library
Author	Sharma, H. Xiao, Z.
Copyright Year	2008
Description	Author affiliation: Alabama A&M Univ., Normal (Sharma, H.; Xiao, Z.)
Abstract	Summary form only given. Single-walled carbon nanotubes (SWCNTs) have been considered as a promising nanostructured material for the realization of future nanoelectronic devices because of their unique electrical properties such as the ballistic transportation of electrons or holes in SWCNTs. In this paper, we report the fabrication of single-walled carbon nanotube field- effect transistors (CNTFETs) with metal and semiconductor materials as the source and drain materials. Ultra-purified HiPCO-grown single-walled carbon nanotubes (SWCNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. N-methyl pyrrolidone (NMP), dimethyl formamide (DMF), toluene and trifluoroacetic acid were used to disperse SWCNTs in solutions. The dispersion of SWCNTs in the solvents were ultrasonically assisted, and then centrifuged at 14000 rpm. The solubility of SWCNTs in the solvents was finally compared, and the degree of dispersion was examined by SEM. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) across the source and drain of CNTFETs to form the channel. Microfabrication techniques such as UV lithography and e-beam lithography were used to fabricate the CNTFETs. The gap between the source and drain varied from 800 nm to 3 um. Both metals such as gold and semiconductors such as bismuth telluride $(Bi_{2}Te_{3})$ were used as the source and drain materials for the CNTFETs. The fabricated CNTFET has a backside gate with the substrate as the gate contact. Silicon dioxide was used as the gate oxide. Electron-beam evaporation and sputtering deposition were used for the deposition of the thin film layers in this research.The drain-source current $(I_{DS})$ versus drain-source voltage $(V_{DS})$ and gate voltage $(V_{G})$ was characterized for the fabricated CNTFETs. It was found that the I-V behavior of metal electrode-based CNTFETs is dependent on the type (metallic or semiconducting) of aligned carbon nanotubes across the electrodes and the I-V behavior of semiconductor electrode-based CNTFETs is independent of the type of carbon nanotubes. This property makes the semiconductor electrode-based CNTFETs more promising than the metal electrode-based CNTFETs. The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.
Starting Page	83
Ending Page	83
File Size	74423
Page Count	1
File Format	PDF
ISBN	9781424418831
DOI	10.1109/SECON.2008.4494263
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carbon nanotubes FETs Semiconductor materials Fabrication Inorganic materials Solvents Lithography Bismuth Sputtering Voltage
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Field-effect transistors based on single-wall carbon nanotubes bundles

A test vehicle and a two step procedure to evaluate a massive number of single-walled carbon nanotube field effect transistors

Single Walled Carbon Nanotube Junctions for Nano-Electronics and Sensors

Fabrication and characterization of suspended carbon nanotubes

Diameter optimisation for highest DoB of CNT-FETs

Effects of Fabrication Process on Current – Voltage Characteristics of Carbon Nanotube Field Effect Transistors

Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Carbon nanotube applications in microelectronics

Single-walled carbon nanotube-based field-effect transistors (non-reviewed)

Similar Documents

Field-effect transistors based on single-wall carbon nanotubes bundles

A test vehicle and a two step procedure to evaluate a massive number of single-walled carbon nanotube field effect transistors

Single Walled Carbon Nanotube Junctions for Nano-Electronics and Sensors

Fabrication and characterization of suspended carbon nanotubes

Diameter optimisation for highest DoB of CNT-FETs

Effects of Fabrication Process on Current – Voltage Characteristics of Carbon Nanotube Field Effect Transistors

Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Carbon nanotube applications in microelectronics

Single-walled carbon nanotube-based field-effect transistors (non-reviewed)