NDLI: FDSOI molecular flash cell with reduced variability for low power flash applications

Content Provider	IEEE Xplore Digital Library
Author	Georgiev, V.P. Amoroso, S.M. Vila-Nadal, L. Busche, C. Cronin, L. Asenov, A.
Copyright Year	2014
Description	Author affiliation: Sch. of Chem., Univ. of Glasgow, Glasgow, UK (Vila-Nadal, L.; Busche, C.; Cronin, L.) \|\| Device Modelling Group, Univ. of Glasgow, Glasgow, UK (Georgiev, V.P.; Amoroso, S.M.; Asenov, A.)
Abstract	In this work we present a modeling study of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)) as a storage media embedded in the gate dielectric of a Fully Depleted SOI (FD SOI) with reduced statistical variability. The simulations were carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.
Starting Page	353
Ending Page	356
File Size	4074031
Page Count	4
File Format	PDF
ISBN	9781479943784
ISSN	19308876
e-ISBN	9781479943760
DOI	10.1109/ESSDERC.2014.6948833
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-09-22
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Computer architecture Resource description framework Microprocessors Threshold voltage Nonvolatile memory Probability density function Doping
Content Type	Text
Resource Type	Article

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