NDLI: Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects

Content Provider	IEEE Xplore Digital Library
Author	Jun Geun Kang Boram Han Kyoung-Rok Han Sung Jae Chung Gyu-Seog Cho Sung-Kye Park Woo Young Choi
Copyright Year	2012
Description	Author affiliation: SK Hynix, Icheion, South Korea (Kyoung-Rok Han; Sung Jae Chung; Gyu-Seog Cho; Sung-Kye Park) \|\| Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea (Jun Geun Kang; Boram Han; Woo Young Choi)
Abstract	Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects.
Starting Page	37
Ending Page	40
File Size	359797
Page Count	4
File Format	PDF
ISBN	9781467328470
e-ISBN	9781467328487
DOI	10.1109/NVMTS.2013.6632858
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-31
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET threshold voltage Doping Logic gates Resource description framework Threshold voltage NAND flash memory cell CMOS integrated circuits Flash memories random dopant fluctuation (RDF)
Content Type	Text
Resource Type	Article

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Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects