NDLI: Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

Content Provider	IEEE Xplore Digital Library
Author	Migita, S. Matsukawa, T. Mori, T. Fukuda, K. Morita, Y. Mizubayashi, W. Endo, K. Liu, Y. O'uchi, S. Masahara, M. Ota, H.
Copyright Year	2014
Description	Author affiliation: Green Nanoelectron. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan (Migita, S.; Matsukawa, T.; Mori, T.; Fukuda, K.; Morita, Y.; Mizubayashi, W.; Endo, K.; Liu, Y.; O'uchi, S.; Masahara, M.; Ota, H.)
Abstract	Tunnel-FETs (TFETs) and MOSFETs are fabricated on a single SOI substrate using the same device parameters and process conditions, and the variation behavior of TFETs is studied by highlighting the difference with MOSFETs. It is found that the variation behavior characteristic to TFET is mainly caused by two factors. One is the dopant concentration at source region. It seems to affect to the uniformity of tunneling current along the channel width. A heavier source concentration is necessary to suppress the variation. Another factor is the channel edge configuration. Electric fields are easily concentrated at channel edge regions, and it lowers the threshold voltage of TFETs locally. It brings about an asymmetric variation behavior. Suppression of these factors is indispensable for the integration of TFET circuits.
Starting Page	278
Ending Page	281
File Size	3683335
Page Count	4
File Format	PDF
ISBN	9781479943784
ISSN	19308876
e-ISBN	9781479943760
DOI	10.1109/ESSDERC.2014.6948814
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-09-22
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Logic gates Performance evaluation Tunneling Threshold voltage Silicon variation tunnel-FET
Content Type	Text
Resource Type	Article

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