NDLI: Grain boundary-driven leakage path formation in HfO dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Bersuker, G. Yum, J. Iglesias, V. Porti, M. Nafria, M. McKenna, K. Shluger, A. Kirsch, P. Jammy, R.
Copyright Year	2010
Description	Author affiliation: Universitat Autònoma de Barcelona, Spain (Iglesias, V.; Porti, M.; Nafria, M.) \|\| SEMATECH, Austin, TX, USA (Bersuker, G.; Yum, J.; Kirsch, P.; Jammy, R.) \|\| University College London, United Kingdom (McKenna, K.; Shluger, A.)
Abstract	The time evolution of the leakage current in HfO based MIM capacitors under constant voltage stress applied either continuously or with periodic interruptions was studied for a range of stress voltages and temperatures. The data analysis was performed based on the results of the conductive AFM measurements demonstrating preferential current flow along grain boundaries (GB) in the HfO dielectric and ab initio calculations, which show the formation of a conductive sub-band due to oxygen vacancy precipitation at GBs. The proposed model suggests that the observed reversible increase in leakage current is caused by the defects segregation at GBs and electron trapping/detrapping at these defects. The energy characteristics of the electrically active defects extracted from the electrical measurements match well with those calculated for neutral oxygen vacancies in hafnia.
Starting Page	333
Ending Page	336
File Size	573907
Page Count	4
File Format	PDF
ISBN	9781424466580
ISSN	19308876
e-ISBN	9781424466610
DOI	10.1109/ESSDERC.2010.5618225
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Leakage current Dielectrics Current measurement Electron traps Temperature measurement Dielectric measurements
Content Type	Text
Resource Type	Article

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