NDLI: Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study

Content Provider	IEEE Xplore Digital Library
Author	Afzalian, A. Flandre, D.
Copyright Year	2010
Description	Author affiliation: Microelectronics Lab, ICTEAM Institute, Université Catholique de Louvain, Louvain-La-Neuve, Belgium (Afzalian, A.; Flandre, D.)
Abstract	We study here, using non-equilibrium Green's function quantum simulations, the impact of dopant segregation (DS) on Schottky barrier (SB) nanoscale transistors for the implementation of ultimate CMOS with low series resistance and steep slope. Owing to their adequate multi-barrier structure, DS-SB transistor can present a gate modulated barrier resonant tunneling (MBRT) effect that allows them to breach the kT/q subthreshold slope limit of classical MOSFET, and therefore pave a way towards steep slope, low S/D resistance electronics. In order to reach their ultimate on-current performances however, new materials with lower SB height and/or means to implant and activate ultra high dopant segregation levels (in the order $10^{21}cm^{−3})$ will be needed, especially when considering that Schottky barrier height will be increased through quantum confinement.
Starting Page	376
Ending Page	379
File Size	462797
Page Count	4
File Format	PDF
ISBN	9781424466580
ISSN	19308876
e-ISBN	9781424466610
DOI	10.1109/ESSDERC.2010.5618206
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Schottky barriers Logic gates Immune system Resonant tunneling devices Semiconductor process modeling Silicon
Content Type	Text
Resource Type	Article

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