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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wiget, R. Ryssel, H. Aderhold, W. |
| Copyright Year | 1989 |
| Description | Author affiliation: Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestrasse 12, 8520 Erlangen, FRG; Lehrstuhl für Elektronische Bauelemente, Artilleriestrasse 12, 8520 Erlangen, FRG (Ryssel, H.) || Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestrasse 12, 8520 Erlangen, FRG (Wiget, R.) || Lehrstuhl für Elektronische Bauelemente, Artilleriestrasse 12, 8520 Erlangen, FRG (Aderhold, W.) |
| Abstract | The oxidation rate of single crystalline silicon depends on the preoxidation cleaning procedure. Various cleaning procedures were compared using aqueous solutions of NH, HCl-H and H· A dip in 10% HF was used either at the beginning or at the end of the cleaning procedure. Thermal oxidation was carried out at 885°C, 985°C and 1085°C in a conventional diffusion furnace. The oxidation rates are maximum for the samples treated with HF as a final step in the cleaning procedure whereas a final treatment with NHOH leads to a minimum oxidation rate. ESCA measurements were performed to investigate the chemical state of the SiO-Si interface. The oxide contains more silicon after HF etching than after NHOH etching. |
| Starting Page | 370 |
| Ending Page | 373 |
| File Size | 1049361 |
| Page Count | 4 |
| File Format | |
| ISBN | 0387510001 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-09-11 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Springer-Verlag Heidelberg |
| Subject Keyword | Cleaning Oxidation Hafnium Silicon Etching Temperature Kinetic theory Performance evaluation Furnaces Chemicals |
| Content Type | Text |
| Resource Type | Article |
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