NDLI: Dependence of the Propagation Delay of an ECL Gate on the Transistor and Circuit Parameters

Content Provider	IEEE Xplore Digital Library
Author	Ghannam, M. Y. Mertens, R. P. Van Overstraeten, R.
Copyright Year	1989
Description	Author affiliation: Interuniversity MicroElectronics Center IMEC, Kapeldreef 75, Leuven, Belgium; Electronics and Communications Dept., Cairo University, Guiza, Egypt. (Ghannam, M. Y.) \|\| Interuniversity MicroElectronics Center IMEC, Kapeldreef 75, Leuven, Belgium (Mertens, R. P.; Van Overstraeten, R.)
Abstract	The propagation delay T of an Emitter-Coupled-Logic (ECL) gate is studied as a function of the different device aind circuit. parameters involved. It is found that the delay in the response of the switching transistor is the dominant delay component. The propagation delay is highly sensitive to the change in the cut-off frequency and the magnitude of the current source. This sensitivity is, however, a strong function of the range in which these parameters are considered. The delay is also highly but monotically sensitive to the product of the base resistance with the collector junction capacitance. The results show a weaker sensitivity of the propagation delay to the voltage swing, to the collector to substrate capacitance and to the emitter junction capacitance. Finally, the delay is almost insensitive to the emitter resistance and to the current gain.
Starting Page	801
Ending Page	806
File Size	1132693
Page Count	6
File Format	PDF
ISBN	0387510001
DOI	10.1007/978-3-642-52314-4_169
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-09-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Springer-Verlag Heidelberg
Subject Keyword	Propagation delay Logic circuits Switching circuits Capacitance Delay effects Logic gates Quantum computing Petroleum Physics computing Computational modeling
Content Type	Text
Resource Type	Article

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