NDLI: Optimizing the Epilayer Doping Concentration with Respect to Bipolar Transistor Performance in a Low-Power UHF-Process

Content Provider	IEEE Xplore Digital Library
Author	Nagel, J.
Copyright Year	1989
Description	Author affiliation: Philips GmbH, Röhren- und Halbleiterwerke, D-2000 Hamburg 54 (Nagel, J.)
Abstract	The performance of bipolar devices (NPN-transistors, lateral PNP-transistors and IIL-gates) in a low-power UHF-process at varying epilayer doping concentration is discussed on the basis of both two-dimensional device simulation and experimental data. While IIL-gates and lateral PNP-transistors would benefit by an increased doping, the observed strong decrease of the NPNs' forward Early Voltage Veaf inmposes a severe restriction on a choice towards raised doping concentrations, since Veaf is an important electrical device parameter in linear analog bipolar processes. The presented results help to find a reasonable, application orientated trade-off between the various electrical device parameters.
Starting Page	515
Ending Page	518
File Size	853500
Page Count	4
File Format	PDF
ISBN	0387510001
DOI	10.1007/978-3-642-52314-4_105
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-09-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Springer-Verlag Heidelberg
Subject Keyword	Doping Bipolar transistors Cutoff frequency Breakdown voltage Current measurement Performance gain Frequency measurement Gain measurement Resistors Propagation delay
Content Type	Text
Resource Type	Article

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Optimizing the Epilayer Doping Concentration with Respect to Bipolar Transistor Performance in a Low-Power UHF-Process