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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Reeves, C.M. Turcu, I.C.E. Gundlach, A.M. Stevenson, J.T.M. Prewett, P. Walton, A.J. Wilkinson, C.D.W. |
| Copyright Year | 1994 |
| Description | Author affiliation: Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK. (Wilkinson, C.D.W.) || Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OXI I OXII 0QX, UK. (Turcu, I.C.E.; Prewett, P.) || Department of Electrical Engineering, University of Edinburgh, King's Buildings, Edinburgh, EH9 3JL, UK. (Reeves, C.M.; Gundlach, A.M.; Stevenson, J.T.M.; Walton, A.J.) |
| Abstract | This paper reports on a device integration experiment in which 0.18 micron gate length silicon FETs are fabricated using three alternative gate lithography approaches based, respectively, on optical, x-ray and e-beam techniques. Details of device fabrication procedures including the critical gate lithography steps are presented along with an assessment of the electrical characteristics of the completed devices. Work on 0.18 micron devices is particularly important for future 1Gbit DRAM circuits and their logic derivatives. |
| Starting Page | 365 |
| Ending Page | 368 |
| File Size | 560331 |
| Page Count | 4 |
| File Format | |
| ISBN | 0863321579 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-09-11 |
| Publisher Place | Scotland |
| Access Restriction | Subscribed |
| Rights Holder | Editions Frontieres |
| Subject Keyword | Lithography Silicon FETs Integrated optics Optical devices Optical device fabrication Electric variables Random access memory Circuits Logic devices |
| Content Type | Text |
| Resource Type | Article |
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