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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Savage, S.M. Ramberg, L.P. Kronlund, B. Bergman, K. |
| Copyright Year | 1994 |
| Description | Author affiliation: ABB Corporate Research, S-721 78 Västerås, Sweden (Bergman, K.) || Industrial Microelectronics Center, PO Box 1084, S-164 21 Kista, Sweden (Savage, S.M.; Ramberg, L.P.) || Industrial Microelectronics Center, PO Box 1084, S-164 21 Kista, Sweden; Ericsson Components AB, S-164 81 Kista, Sweden (Kronlund, B.) |
| Abstract | The processing and characterisation of 6H-SiC PiN diodes is described. Comparisons are made between diodes with different surface passivations, and numerical simulation is used to better understand their behaviour. A ``wet'' thermal oxide with a deposited silicon nitride layer on top is found to be the best surface passivation. This permits on-wafer high-voltage measurements to be made in air, possibly for the first time. Numerical simulation is used to improve the understanding of the behaviour of these devices. |
| Starting Page | 753 |
| Ending Page | 756 |
| File Size | 391689 |
| Page Count | 4 |
| File Format | |
| ISBN | 0863321579 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-09-11 |
| Publisher Place | Scotland |
| Access Restriction | Subscribed |
| Rights Holder | Editions Frontieres |
| Subject Keyword | Silicon carbide Diodes Passivation Temperature Medical simulation Numerical simulation Thermal conductivity Etching Anodes Cathodes |
| Content Type | Text |
| Resource Type | Article |
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