NDLI: A High-Sensitive Pd/InGaP transistor hydrogen sensor

Content Provider	IEEE Xplore Digital Library
Author	Chung-Yeh Wu Chin-Tien Lin Yen-I Chou Chieng-Chi Tung Wen-Chau Liu Huey-Ing Chen
Copyright Year	2007
Description	Author affiliation: Nat. Cheng-Kung Univ., Tainan (Chung-Yeh Wu; Chin-Tien Lin)
Abstract	In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5 ppm-1% and temperatures of 303-503 K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm $H_{2}/air,$ obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % $H_{2}/air$ was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.
Starting Page	442
Ending Page	445
File Size	761961
Page Count	4
File Format	PDF
ISBN	9781424411238
ISSN	19308876
e-ISBN	9781424411245
DOI	10.1109/ESSDERC.2007.4430973
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Temperature sensors HEMTs Sensor phenomena and characterization MODFETs Current-voltage characteristics Current control Tellurium Voltage Time factors
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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