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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ma, Yueyou Wen, Chenyu Zeng, Ruixue Xu, Ming Pan, Jiangfeng Wu, Dongping |
| Copyright Year | 2014 |
| Description | Author affiliation: State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, CHINA (Ma, Yueyou; Wen, Chenyu; Zeng, Ruixue; Xu, Ming; Pan, Jiangfeng; Wu, Dongping) |
| Abstract | Extended-gate ion sensitive field-effect-transistor (EG-ISFET), which can be easily integrated in conventional large-scale integrated circuits, has recently disrupted the field of semiconductor genetics and gained accelerated momentum in more biosensing applications. Comprehensive understanding and modeling of the EG-ISFET which generally comprises of reference electrode, electrolyte, electrical double layer and an extended-gate MOSFET are prerequisite for designing integrated circuits using EG-ISFET as the sensing device. In this work, we propose an improved equivalent circuit model of EG-ISFET and provide in-depth understanding of EG-ISFET through simulating its DC and transient characteristics using SPICE. These results pave the way to expedite using EG-ISFET in emerging semiconductor biosensing applications. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 1361137 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781479932962 |
| e-ISBN | 9781479932825 |
| DOI | 10.1109/ICSICT.2014.7021480 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-10-28 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Integrated circuit modeling Sensors Semiconductor device modeling MOSFET Transient analysis Electrodes Equivalent circuits |
| Content Type | Text |
| Resource Type | Article |
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