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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Liu, Yuan Huang, Yu Duan, Xiangfeng |
| Copyright Year | 2014 |
| Description | Author affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, 90095, USA (Liu, Yuan; Huang, Yu) || Department of Chemistry and Biochemistry, University of California, Los Angeles, 90095, USA (Duan, Xiangfeng) |
| Abstract | Graphene has emerged as an exciting material for future electronics and optoelectronics due to its unique electrical, optical and mechanical properties. However, the lack of an intrinsic bandgap in graphene has limited the achievable on-off ratio in transistors using graphene as an active channel. The creation of a transport gap in graphene nanostructures or bilayer graphene can improve the on-off ratio, but often at a severe sacrifice of the deliverable current density. With single atomic thickness, finite density of states and weak screening effect, graphene exhibits a field-tunable work-function and partial electrostatic transparency. It can thus function as an active contact in tunable graphene-semiconductor junction to enable a new generation of vertical $device^{1-5}.$ Here we discuss three different vertical field-effect transistors, which have been recently demonstrated with greatly improved on-off ratio and current density, as well as unique properties such high flexibility, stability and low cost. This could open up a new pathway to graphene electronics and ultra-flexible thin film transistors |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 896573 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479932962 |
| e-ISBN | 9781479932825 |
| DOI | 10.1109/ICSICT.2014.7021165 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-10-28 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates Thin film transistors Graphene Abstracts Films Silicon |
| Content Type | Text |
| Resource Type | Article |
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