NDLI: Ni silicide and Ni germanosilicide self-aligned process for 65nm and beyond CMOS technology by 2-step rapid thermal annealing

Content Provider	IEEE Xplore Digital Library
Author	Hongxiang Mo Bonfanti, P. Bei Zhu Gao, D. Hanming Wu Chen, J. Hui-Zhen Wu Yu-Long Jiang Guo-Ping Ru Chen, F.
Copyright Year	2004
Description	Author affiliation: Semicond. Manuf. Int. Corp., Shanghai, China (Hongxiang Mo; Bonfanti, P.; Bei Zhu; Gao, D.; Hanming Wu; Chen, J.)
Abstract	Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the influence of rapid thennal annealing process on the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. Two-step annealing process was found to improve the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. The results indicate that two-step annealing process would be preferred for NiSi or Ni(Si/sub 1-x/Ge/sub x/) formation on the ultra-shallow junction in the future CMOS technology nodes.
Starting Page	464
Ending Page	467
File Size	823956
Page Count	4
File Format	PDF
ISBN	078038511X
DOI	10.1109/ICSICT.2004.1435048
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Silicides CMOS process Rapid thermal processing Rapid thermal annealing Temperature Electrical resistance measurement X-ray diffraction Nominations and elections Spectroscopy
Content Type	Text
Resource Type	Article

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