NDLI: The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra

Content Provider	IEEE Xplore Digital Library
Author	Wenyu Zhu Xiaoqin Li Chenglu Lin
Copyright Year	1995
Description	Author affiliation: Inst. of Metall., Acad. Sinica, Shanghai, China (Wenyu Zhu; Xiaoqin Li; Chenglu Lin)
Abstract	The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.
Starting Page	760
Ending Page	762
File Size	120877
Page Count	3
File Format	PDF
ISBN	0780330625
DOI	10.1109/ICSICT.1995.503551
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-10-24
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonhomogeneous media Ion implantation Silicon Atomic measurements Energy measurement Lattices Atom optics Particle beam optics Optical devices Spectroscopy
Content Type	Text
Resource Type	Article

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