NDLI: Techniques for electron-beam fabrication of 0.5 /spl mu/m linewidth masks using AZ1350 positive photoresist

Content Provider	IEEE Xplore Digital Library
Author	Lixin Zhao Li Peng Zhongyi Zhang Xiangdong Yu
Copyright Year	1995
Description	Author affiliation: Masks Center, China Huajing Electron. Group Corp., Jiangsu, China (Lixin Zhao; Li Peng; Zhongyi Zhang; Xiangdong Yu)
Abstract	Techniques are described in detail for fabrication of 0.5 /spl mu/m-linewidth masks on an electron-beam (e-beam) exposure system using chrome blanks coated with commercial AZ1350 positive photoresist. The proximity effects occurring during e-beam exposure are theoretically analyzed. Data compensation for e-beam forward scattering and suppression of e-beam back scattering by using a low-sensitivity photoresist have been employed to eliminate the influence of the proximity effects on the critical dimensions (CD) in e-beam exposure of submicron patterns. Masks with 0.5/spl plusmn/0.1 /spl mu/m linewidth have been successfully fabricated. Spray development and plasma etching of the chrome film were used in the processing. The reasons for and advantages of using AZ1350 positive photoresist are briefly discussed.
Starting Page	680
Ending Page	684
File Size	293212
Page Count	5
File Format	PDF
ISBN	0780330625
DOI	10.1109/ICSICT.1995.503389
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-10-24
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromagnetic scattering Resists Electron beams Proximity effect Optical device fabrication Acceleration Etching Particle beams Optical materials Materials testing
Content Type	Text
Resource Type	Article

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