NDLI: Side-wall oxide isolation self-aligned technique for SiGe/Si HBTs

Content Provider	IEEE Xplore Digital Library
Author	Chen, J.X. Zou, D.S. Gao, G. Han, J.R. Dong, X. Yuan, Y. Zhang, S.M. Du, J.Y. Wang, D.F. Shen, G.D. Ni, W.X. Willander, M. Hansson, G.V.
Copyright Year	1995
Description	Author affiliation: Dept. of Electron. Eng., Beijing Polytech. Univ., China (Chen, J.X.; Zou, D.S.; Gao, G.; Han, J.R.; Dong, X.; Yuan, Y.; Zhang, S.M.; Du, J.Y.; Wang, D.F.; Shen, G.D.)
Abstract	A low temperature side-wall oxide isolation self-aligned technique for SiGe/Si HBTs has been developed, by which the SiGe/Si HBTs with advanced performances have been fabricated. Its current gain is about 70 at 300 K and is more than 2000 at 77 K. It also has superior saturation characteristics with Early voltage over 200 V. Moreover, using this technique, the transverse base resistance is reduced by 50%, resulting in the cutoff frequency and the maximum frequency of oscillation being increased considerably. N/sub F/ is reduced by 3 dB, compared with those devices fabricated by the conventional Si techniques.
Starting Page	462
Ending Page	464
File Size	177143
Page Count	3
File Format	PDF
ISBN	0780330625
DOI	10.1109/ICSICT.1995.500241
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-10-24
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Temperature Cutoff frequency Wet etching Isolation technology Voltage Leakage current Electron beams
Content Type	Text
Resource Type	Article

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