NDLI: Measurement and simulation of self-heating in SOI CMOS analogue circuits

Content Provider	IEEE Xplore Digital Library
Author	Tenbroek, B.M. Lee, M.S.L. Redman-White, W. Edwards, C.F. Bunyan, R.J.T. Uren, M.J.
Copyright Year	1997
Description	Author affiliation: Dept. of Electron. & Comput. Sci., Southampton Univ., UK (Tenbroek, B.M.)
Abstract	Summary form only given. The influence of dynamic self-heating on SOI MOSFET device behaviour is becoming well known. Although digital circuits typically operate sufficiently fast that self-heating does not affect behaviour, its effects must still be considered during parameter extraction. However, that the operation of analogue circuits will be influenced by self-heating is much more likely. Consequently, SPICE models should include self-heating, with accurately characterised thermal resistances and time constants. This paper explores the effect of self-heating on some common analogue circuits in a 0.7 /spl mu/m PD SOI technology, both from measurements and from SPICE simulations using a new SOI MOSFET model (STAG v2.0).
Starting Page	156
Ending Page	157
File Size	200962
Page Count	2
File Format	PDF
ISBN	078033938X
ISSN	1078621X
DOI	10.1109/SOI.1997.634980
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit simulation CMOS analog integrated circuits SPICE Voltage Temperature MOSFET circuits Ring oscillators Delay Predictive models Earth
Content Type	Text
Resource Type	Article

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