NDLI: Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation [SOI technology]

Content Provider	IEEE Xplore Digital Library
Author	Weldon, M.K. Marsico, V.E. Chabal, Y.J. Collot, M. Caudano, Y. Christman, S.B. Chaban, E.E. Jacobson, D.C. Brown, W.L. Sapjeta, J. Hsieh, C.-M. Goodwin, C.A. Agarwal, A. Venezia, V.C. Haynes, T.E. Jackson, W.B.
Copyright Year	1997
Description	Author affiliation: Bell Labs., Lucent Technol., Murray Hill, NJ, USA (Weldon, M.K.)
Abstract	There has been much interest in reproducing Si exfoliation by H implantation and in understanding the mechanism leading to such a remarkably uniform shearing. We have previously demonstrated that, contrary to the initial speculation, there are in fact three distinct aspects to the process: i) the generation of damage to the crystalline material by the implantation; ii) the unique surface chemistry of hydrogen and silicon that drives the thermal evolution of this damage region and; iii) the creation of internal pressure that ultimately causes exfoliation ofthe overlying Si layer. Therefore, a detailed understanding of the exfoliation mechanism involves the study of initial damage, of H-passivation of various internal structures and of the mechanical forces exerted by trapped gases as a function of hydrogen implantation dose/depth and annealing temperature. In this work, we have used different hydrogen implantation conditions (ion energies ranging from 1 eV to 1 MeV and substrate crystallographic orientations) as well as co-implantation of a variety of other elemental species, in combination with novel spectroscopic configurations, to further explore these different mechanistic aspects.
Starting Page	124
Ending Page	125
File Size	214318
Page Count	2
File Format	PDF
ISBN	078033938X
ISSN	1078621X
DOI	10.1109/SOI.1997.634964
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Hydrogen Helium Shearing Crystalline materials Chemistry Drives Gases Annealing Temperature
Content Type	Text
Resource Type	Article

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