NDLI: Silicon-on-diamond MOS-transistors with thermally grown gate oxide

Content Provider	IEEE Xplore Digital Library
Author	Edholm, B. Vestling, L. Bergh, M. Tiensuu, S. Soderbarg, A.
Copyright Year	1997
Description	Author affiliation: Dept. of Solid State Electron., Uppsala Univ., Sweden (Edholm, B.)
Abstract	Summary form only given. Self-heating in Silicon-On-Insulator (SOI) devices has during the past years attracted lots of attention and is a problem that remains to be solved. It has, furthermore, been shown that in smart power devices, thick buried oxides of 3 /spl mu/m or more are desired to prevent the substrate potential to lower breakdown voltages. However, these thicker buried oxides will only aggravate the thermal limitations imposed by the buried oxide. Due to the outstanding thermal properties of diamond compared to silicon dioxide, it would consequently be advantageous if silicon dioxide could be replaced with diamond in future SOI materials. Even though it has been shown that diamond is compatible with conventional silicon processing, no MOS-transistors with thermally grown gate oxide has been manufactured up to date, due to the difficulty in protecting diamond during furnace oxidations. In this paper Silicon-On-Diamond (S-O-D) MOS-transistors with thermally grown gate oxide are presented for the first time.
Starting Page	30
Ending Page	31
File Size	381639
Page Count	2
File Format	PDF
ISBN	078033938X
ISSN	1078621X
DOI	10.1109/SOI.1997.634917
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Voltage Silicon Meetings
Content Type	Text
Resource Type	Article

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