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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | SinNyoung Kim Tsuchiya, A. Onodera, H. |
| Copyright Year | 2010 |
| Description | Author affiliation: Dept. Communications and Computer Engineering, Kyoto University, 606-8501, JAPAN (SinNyoung Kim; Tsuchiya, A.; Onodera, H.) |
| Abstract | A design procedure for generating predictive MOS-FET models is proposed. Due to evolving nature of future prediction, predictive models based on a certain prediction soon become absolute. We have therefore developed a design procedure for maintaining compatibility with most up-to-date prediction such as ITRS. The design procedure can generate predictive RF models for the first time. Details of the design procedure for BSIM4 as a core model are explained, with an application to LNA design example. |
| Starting Page | 396 |
| Ending Page | 399 |
| File Size | 2366048 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424466825 |
| e-ISBN | 9781424466832 |
| DOI | 10.1109/SOCC.2010.5784704 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-09-27 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Predictive models Radio frequency Mathematical model Resistance Integrated circuit modeling Capacitance |
| Content Type | Text |
| Resource Type | Article |
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