NDLI: Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Wang, A.C.-C. Chen, E. Tzer-Min Shen Wu, J. Diaz, C.H.
Copyright Year	2013
Description	Author affiliation: TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan (Wang, A.C.-C.; Chen, E.; Tzer-Min Shen; Wu, J.; Diaz, C.H.)
Abstract	Impact of quantum confinement on electron mobility and its stress responses for (100) and (110)-orientated single-gate (SG) and double-gate (DG) nMOSFETs is studied. Unstrained electron mobility in (110) DG nMOSFETs is found to be significantly higher than that of (110) SG devices. This paper discusses another physical explanation to the experimentally observed higher electron mobility in (110) FinFET sidewall channels as compared to that observed in planar (110) devices. It is also found that the electron mobility increases faster under uniaxial tensile stress for (110) devices than for (100) ones. The higher mobility in (110) DG devices is attributed to the lighter confinement effective mass of Δ4 valleys and the non-parabolicity of Δ2 valleys along the <;110> directions. With high enough tensile strain, DG nMOSFETs with (110) surface orientation are expected to outperform these on (100).
Starting Page	192
Ending Page	195
File Size	916872
Page Count	4
File Format	PDF
ISBN	9781467357333
ISSN	19461569
e-ISBN	9781467357364
DOI	10.1109/SISPAD.2013.6650607
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-03
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron mobility Silicon Stress Rough surfaces Surface roughness FinFETs single-gate and double-gate nMOSFETs quantum confinement mobility stress response
Content Type	Text
Resource Type	Article

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