NDLI: Unified compact modelling strategies for process and statistical variability in 14-nm node DG FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Wang, X. Cheng, B. Brown, A.R. Millar, C. Alexander, C. Reid, D. Kuang, J.B. Nassif, S. Asenov, A.
Copyright Year	2013
Description	Author affiliation: Device Modelling Group, Univ. of Glasgow, Glasgow, UK (Wang, X.; Cheng, B.; Asenov, A.) \|\| IBM Austin Res. Lab., Austin, TX, USA (Kuang, J.B.; Nassif, S.) \|\| Gold Stand. Simulations, Ltd., Glasgow, UK (Brown, A.R.; Millar, C.; Alexander, C.; Reid, D.)
Abstract	This paper presents a principal component analysis (PCA)-based unified compact modelling strategy for process-induced and statistical variability in 14-nm double gate SOI FinFET technology. There is strong interplay between process and statistical variability in FinFET technology and failure to capture the correlations between them can lead to an inaccurate estimation of overall statistical variability with errors of up to 30%. Therefore a new unified compact modelling strategy for variability, based on comprehensive atomistic simulations within the CD corner space, is presented. First, an extended uniform compact model is built to capture CD process variation using a set of parameters, and then statistical variability is extracted using another small set of `statistical' parameters. Later, the response of the extracted statistical parameters over the CD space is characterised, and finally used in a PCA method to generate the unified compact models capturing both process and statistical variability over the whole CD variation space.
Starting Page	139
Ending Page	142
File Size	4988352
Page Count	4
File Format	PDF
ISBN	9781467357333
ISSN	19461569
e-ISBN	9781467357364
DOI	10.1109/SISPAD.2013.6650594
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-03
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Principal component analysis Logic gates Correlation Integrated circuit modeling Analytical models Metals statistical variability compact model FinFET interplay PCA process variability
Content Type	Text
Resource Type	Article

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