NDLI: Numerical modeling of silicon film deposition in very-high-frequency plasma reactor

Content Provider	IEEE Xplore Digital Library
Author	Satake, K. Kobayashi, Y. Morita, S.
Copyright Year	2002
Description	Author affiliation: Adv. Technol. Res. Center, Mitsubishi Heavy Industries Ltd., Kanazawa, Japan (Satake, K.; Kobayashi, Y.; Morita, S.)
Abstract	We present a numerical modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon film from SiH/sub 4/ and H/sub 2/ gas mixtures in very-high-frequency (VHF) plasma reactor. The model is composed by electron impact, gas-phase, and surface reactions in a well-mixed reactor model. A set of plasma parameters such as electron density, electron temperature and electron impact reaction rates is determined separately by nonequilibrium plasma model and used as inputs for well-mixed reactor models. The gas-phase reactions include electron impact and neutral-neutral reactions. Some of unknown rates of surface reactions are determined using quantum chemical calculations and transition state theory. In well-mixed reactor models, concentrations of each chemical species are calculated in a steady state condition using mass conservation equation uniformed through the reactor. Numerical results of growth rate as a function of plasma reactor operating parameters show good agreement with experimental ones. Finally optimal operating parameters are investigated using our model combined with design of experiments and optimization techniques.
Sponsorship	Japan Soc. Appl. Phys. IEEE Electron Devices Soc. IEICE IEEE EDS Japan Chapter IEEE EDS Kansai Chapter
Starting Page	135
Ending Page	138
File Size	275749
Page Count	4
File Format	PDF
ISBN	4891140275
DOI	10.1109/SISPAD.2002.1034535
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied Physics
Subject Keyword	Numerical models Silicon Semiconductor films Inductors Plasma chemistry Electrons Plasma temperature Plasma density Chemical vapor deposition Quantum mechanics
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High rate growth of microcrystalline silicon films assisted by high density plasma

Amorphous silicon carbide films by plasma-enhanced chemical vapor deposition

High Density of Si Nanocrystals Fabricated in a VHF-PECVD System for Light-Emitting Devices

Low Temperature Carbon Nanotube Fabrication using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition Method

High rate growth of preferentially orientated crystalline silicon films by ECR plasma CVD

High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

High efficiency thin film silicon solar cell and module

Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD

Synthesis of microcrystalline silicon films by plasma enhanced chemical vapor deposition using multiple inductively-coupled-plasma modules with low-inductance antenna

Numerical modeling of silicon film deposition in very-high-frequency plasma reactor

Similar Documents

High rate growth of microcrystalline silicon films assisted by high density plasma

Amorphous silicon carbide films by plasma-enhanced chemical vapor deposition

High Density of Si Nanocrystals Fabricated in a VHF-PECVD System for Light-Emitting Devices

Low Temperature Carbon Nanotube Fabrication using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition Method

High rate growth of preferentially orientated crystalline silicon films by ECR plasma CVD

High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

High efficiency thin film silicon solar cell and module

Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD

Synthesis of microcrystalline silicon films by plasma enhanced chemical vapor deposition using multiple inductively-coupled-plasma modules with low-inductance antenna

Numerical modeling of silicon film deposition in very-high-frequency plasma reactor