NDLI: Microstrip circuits on micromachined silicon

Content Provider	IEEE Xplore Digital Library
Author	Hasch, J. Irion, H. Muller, A.
Copyright Year	2004
Description	Author affiliation: Central Res. & Dev., Robert Bosch GmbH, Stuttgart, Germany (Hasch, J.; Irion, H.; Muller, A.)
Abstract	Fully monolithic integration of a millimeter wave system on silicon requires low loss passive circuitry. Transmission line elements are needed to interconnect active devices and to realize distributed passive components. Using bulk micromachining and high resistivity silicon on insulator (SOI) wafers, well defined thin silicon membranes can be manufactured. This allows the use of microstrip circuits on silicon substrates at frequencies beyond 100 GHz. Full wave simulation results accompanied by measurements are presented for coplanar to microstrip transitions, microstrip lines and two simple test circuits.
Sponsorship	IEEE Microwave Theory and Techniques Soc. Georgia Electron. Design Center at Georgia Tech. NASA Glenn Res. Center
Starting Page	270
Ending Page	273
File Size	18142
Page Count	4
File Format	PDF
ISBN	0780387031
DOI	10.1109/SMIC.2004.1398221
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microstrip Silicon on insulator technology Circuit testing Monolithic integrated circuits Millimeter wave circuits Distributed parameter circuits Integrated circuit interconnections Micromachining Conductivity Biomembranes
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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