NDLI: On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes

Content Provider	IEEE Xplore Digital Library
Author	Morton, M. Andrews, J. Lee, J. Papapolymerou, J. Cressler, J.D. Cho, D. Hong, K. Shin, H. Park, K. Yi, S.
Copyright Year	2004
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA (Morton, M.; Andrews, J.; Lee, J.; Papapolymerou, J.; Cressler, J.D.; Cho, D.; Hong, K.; Shin, H.; Park, K.; Yi, S.)
Abstract	This paper examines the feasibility of implementing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip transmission lines, using the top and bottom metalization layers (with a 3.24 /spl mu/m separation), from a 4 layer metal process SiGe HBT technology were designed, fabricated, and measured up to 110 GHz. These measured results were compared to full wave EM simulation results to gain additional design insight. Additional EM simulations were used to explore the effects of design rule changes which do not allow for large extents of ground plane without slotting.
Sponsorship	IEEE Microwave Theory and Techniques Soc. Georgia Electron. Design Center at Georgia Tech. NASA Glenn Res. Center
Starting Page	53
Ending Page	56
File Size	1104934
Page Count	4
File Format	PDF
ISBN	0780387031
DOI	10.1109/SMIC.2004.1398165
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transmission lines Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors BiCMOS integrated circuits Transmission line measurements Microstrip Foundries Coplanar waveguides Costs
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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