NDLI: High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology

Content Provider	IEEE Xplore Digital Library
Author	Pourkamali, S. Ayazi, F.
Copyright Year	2004
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA (Pourkamali, S.; Ayazi, F.)
Abstract	The paper reports on the implementation and characterization of thick bulk mode VHF capacitive disk resonators with reduced motional resistance. Single crystal silicon (SCS) side-supported disk resonators with thickness of 18 /spl mu/m and 10 /spl mu/m and capacitive gaps of 160 nm and 75 nm, respectively (gap aspect-ratio>130), are fabricated on silicon-on-insulator substrates using a 3-mask HARPSS-on-SOI process. Over 20/spl times/ lower motional resistance and larger signal-to-noise ratio compared to the previous thin VHF SCS resonators is demonstrated, resulting from the new resonator design with increased number of electrodes and larger device thickness. Quality factors in the order of 30,000 to 50,000 at resonant frequencies of 150-230 MHz are demonstrated for the thick disk resonators. The measured data is in excellent agreement with the theoretical values.
Sponsorship	IEEE Microwave Theory and Techniques Soc. Georgia Electron. Design Center at Georgia Tech. NASA Glenn Res. Center
Starting Page	147
Ending Page	150
File Size	885773
Page Count	4
File Format	PDF
ISBN	0780387031
DOI	10.1109/SMIC.2004.1398189
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resonant frequency Micromechanical devices Q factor Silicon Resonance Fabrication Electric resistance Electrodes Costs Surface resistance
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

18Pm THICK HIGH FREQUENCY CAPACITIVE HARPSS RESONATORS WITH REDUCED MOTIONAL RESISTANCE

The HARPSS process for fabrication of nano-precision silicon electromechanical resonators

High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gaps

SOI-based HF and VHF single-crystal silicon resonators with SUB-100 nanometer vertical capacitive gaps

Thermoelastic damping in trench-refilled polysilicon resonators

SOI-based capacitive micromechanical resonator with submicron gap-spacing

Ultrasensitive dielectric filled Lamé mode biomass sensor

Dimension-Scaling of Microcantilevers Resonators

Frequency trimming and Q-factor enhancement of micromechanical resonators via localized filament annealing

High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology

Similar Documents

18Pm THICK HIGH FREQUENCY CAPACITIVE HARPSS RESONATORS WITH REDUCED MOTIONAL RESISTANCE

The HARPSS process for fabrication of nano-precision silicon electromechanical resonators

High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gaps

SOI-based HF and VHF single-crystal silicon resonators with SUB-100 nanometer vertical capacitive gaps

Thermoelastic damping in trench-refilled polysilicon resonators

SOI-based capacitive micromechanical resonator with submicron gap-spacing

Ultrasensitive dielectric filled Lamé mode biomass sensor

Dimension-Scaling of Microcantilevers Resonators

Frequency trimming and Q-factor enhancement of micromechanical resonators via localized filament annealing

High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology