NDLI: Micro-G silicon accelerometer using surface electrodes

Content Provider	IEEE Xplore Digital Library
Author	Walmsley, R.G. Kiyama, L.K. Milligan, D.M. Alley, R.L. Erickson, D.L. Hartwell, P.G.
Copyright Year	2009
Description	Author affiliation: Hewlett-Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, USA (Walmsley, R.G.; Kiyama, L.K.; Hartwell, P.G.) \|\| Technology Development Operations/Imaging and Printing Group, Hewlett-Packard Company, Palo Alto, CA, USA (Milligan, D.M.; Alley, R.L.; Erickson, D.L.)
Abstract	We present a new technology platform for silicon inertial sensors. The platform combines three technology features to set new performance and manufacturability standards for MEMS sensors. First, bonding three silicon wafers creates wafer level packaging and a homogenous stack of silicon material improving device temperature stability. Second, through-wafer etching is used to define the mechanical structure creating a proof mass with 1000x larger mass than a typical MEMS sensor. Finally, we use surface electrode technology to create a lateral capacitance-based transducer enabling large capacitance change per acceleration and allowing a large dynamic range without electrode contact. The large mass together with reduced damping of a lateral sensor result in substantially reduced thermal-mechanical noise. We present a two axis, in-plane, MEMS accelerometer having nG/√Hz noise performance, over 130 dB dynamic range, 300 Hz bandwidth, and a chip size comparable to other MEMS accelerometers. The platform is extensible to gyroscopes and single chip IMU.
Starting Page	971
Ending Page	974
File Size	753398
Page Count	4
File Format	PDF
ISBN	9781424445486
ISSN	19300395
DOI	10.1109/ICSENS.2009.5398201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-25
Publisher Place	New Zealand
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Accelerometers Electrodes Micromechanical devices Mechanical sensors Capacitance Dynamic range Manufacturing Sensor phenomena and characterization Wafer bonding
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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