NDLI: Implementation of double patterning lithography process using limited illumination systems

Content Provider	IEEE Xplore Digital Library
Author	Ci Choi Miller Qiu Li, W. Sui, H. Mieno, F.
Copyright Year	2007
Description	Author affiliation: Semicond. Manuf. Int. Corp., Shanghai (Ci Choi; Miller Qiu; Li, W.; Sui, H.; Mieno, F.)
Abstract	The double patterning (DP) process is mainly for the resolution enhancement beyond limited lithography system not only high numerical aperture (NA) system but small one also. In this paper, we developed several duty patterns using DP technology under ArF, 0.75 NA systems to meet the 65 nm half-pitch patterns. For the line DP process, it is clear that the limited resolution is 65 nm half pitch pattern with marginal process windows and overlay should be controlled within 30 nm, M+3 sigma value. For the $2^{nd}$ patterning process, there is dose shift compared with Is patterning dose for the substrate difference. From these results, DP technologies can be applied to overcome resolution limited process not only fine patterning required but certain patterning which can be achieved without any investments.
Starting Page	1
Ending Page	4
File Size	1620869
Page Count	4
File Format	PDF
ISBN	9781424411412
ISSN	1523553X
DOI	10.1109/ISSM.2007.4446858
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lithography Lighting Etching Silicon compounds Manufacturing processes Pulp manufacturing Semiconductor device manufacture Apertures Substrates Investments Resolution DP Overlay Line Trench
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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