NDLI: Thermal effects in InAs/GaAs quantum dot vertical cavity surface emitting lasers

Content Provider	IEEE Xplore Digital Library
Author	Yoon Soon Fatt
Copyright Year	2012
Description	Author affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Rep. of Singapore (Yoon Soon Fatt)
Abstract	The performance of 1.3-μm InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) is adversely affected by self-heating effect. In this talk, a self-consistent model comprising rate equations and thermal conduction equation will be presented to analyze the influence of self-heating on the carrier dynamics and output power of QD VCSELs. The simulation results indicate that the low output power is attributed to hole thermalization and escape due to the thin wetting layer. The hole confinement can be improved by increasing the number of QD layers and surface density, as well as adopting p-type modulation doping. The fabricated p-doped QD VCSELs exhibit high temperature stability in the threshold current. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation were achieved, with side mode suppression ratio (SMSR) of 34 dB at room temperature (RT). However, the output power is limited by the small-sized oxide apertures. To achieve both high output power and enhancement of the fundamental mode emission, a dielectric-free (DF) approach with surface-relief (SR) technique is applied in our device fabrication. Compared with the conventional dielectric-dependent (DD) method, the DF approach potentially reduces the fabrication cost and complexity. Moreover, with the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave (CW) operation. The output power increases up to 3.42 mW under pulsed operation with oxide aperture diameter of ∼15 μm. The surface-relief technique effectively enhances the fundamental mode emission of the QD VCSEL.
File Size	364816
File Format	PDF
ISBN	9781467323956
e-ISBN	9781467323963
e-ISBN	9781467323949
DOI	10.1109/SMElec.2012.6417075
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-09-19
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Vertical cavity surface emitting lasers Power generation Quantum dot lasers Mathematical model Apertures Gallium arsenide Cavity resonators
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

Optical pulse generation from single-section InAs/GaAs quantum dot edge-emitting lasers

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

Performance characteristics of GaAs-based oxide-confined In(Ga)As/GaAs quantum-dot vertical-cavity surface-emitting diode lasers

Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs

Ultra High Speed Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers

Thermal effects in InAs/GaAs quantum dot vertical cavity surface emitting lasers

Similar Documents

GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

Optical pulse generation from single-section InAs/GaAs quantum dot edge-emitting lasers

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

Performance characteristics of GaAs-based oxide-confined In(Ga)As/GaAs quantum-dot vertical-cavity surface-emitting diode lasers

Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs

Ultra High Speed Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers

Thermal effects in InAs/GaAs quantum dot vertical cavity surface emitting lasers