NDLI: Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts

Content Provider	IEEE Xplore Digital Library
Author	Bradley, S.T. Brillson, L.J. Hwang, J. Schaff, W.J.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA (Bradley, S.T.; Brillson, L.J.)
Abstract	Schottky contacts to AlGaN are of great importance to its applications in micro- and optoelectronic devices. To characterize the dependence of interfacial properties on Schottky barrier formation in this material system we have used low energy cathodoluminescence spectroscopy (CLS), secondary ion mass spectrometry (SIMS), internal photoemission spectroscopy (IPE), and I-V measurements to correlate the local chemistry of the Ni/AlGaN interfaces with the CLS electronic properties and the IPE/I-V electrical properties as a function of thermal, wet, and UV-ozone processing conditions. Ni/Al/sub 0.32/Ga/sub 0.68/N contacts has showed that diodes processed by UV-ozone cleaning with a buffered HF dip removes the resulting oxide and exhibits Schottky barrier heights (1.5-1.53 eV) greater than those for diodes processed by UV-ozone only or buffered HF only (1.36-1.44 eV). Annealing the diodes at 325/spl deg/C and 425/spl deg/C in ultra-high vacuum increases the Schottky barrier height in the order of 0.1 eV-0.25 eV to values greater than or equal to the barrier heights measured on the UV-ozone+buffered HF processed diodes. Similar increase with annealing in the Ni/AlGaN Schottky barrier height as measured by C-V have also been reported. The obtained results highlights the key role of initial surface chemistry and thermal annealing on the Ni Schottky barrier height in the AlGaN material system.
Sponsorship	IEEE Electron Device Soc. Nat. Sci. Found. Army Research Laboratory Naval Research Laboratory Army Research Office Nat. Inst. of Standards and Technol. Elec. and Comput. Eng. Dept., Univ. of Maryland
Starting Page	404
Ending Page	405
File Size	90436
Page Count	2
File Format	PDF
ISBN	0780381394
DOI	10.1109/ISDRS.2003.1272155
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky barriers Chemicals Aluminum gallium nitride Schottky diodes Mass spectroscopy Hafnium Annealing Chemistry Optoelectronic devices Photoelectricity
Content Type	Text
Resource Type	Article

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